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Littelfuse IXYS CMA50E1600HB Thyristor with 1600 Volt Max Blocking Voltage and 1.11 kAs Fusing Value

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Littelfuse IXYS CMA50E1600HB Thyristor with 1600 Volt Max Blocking Voltage and 1.11 kAs Fusing Value

Holding Current (Ih) : 100mA

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.3V

Current - On State(It(RMS)) : 79A

Peak off - state voltage(Vdrm) : 1.6kV

Current - Surge(Itsm@f) : -

SCR Type : 1 SCR

Gate Trigger Voltage (Vgt) : 1.5V

Operating Temperature : -40℃~+150℃@(Tj)

Description : 100mA 50mA 1.6kV 1 SCR TO-247 SCRs RoHS

Mfr. Part # : CMA50E1600HB

Model Number : CMA50E1600HB

Package : TO-247

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Product Overview

The CMA50E1600HB is a single thyristor designed for line frequency applications. It features a planar passivated chip for long-term stability and is suitable for various power control scenarios. The device comes in a standard TO-247 package and is RoHS compliant.

Product Attributes

Brand: IXYS
Part Number: CMA50E1600HB
Package: TO-247
Certifications: RoHS compliant, Epoxy meets UL 94V-0
Chip Technology: Planar passivated
Backside: Anode

Technical Specifications

Symbol	Definition	Conditions	Unit	min.	typ.	max.
V_RRM / V_DRM	max. repetitive reverse/forward blocking voltage	T_VJ = 150C	V			1600
I_T(RMS)	RMS forward current	T_AV 180 sine	A			50
I_TAV	average forward current	180 sine	A			50
I²t	value for fusing	t = 10 ms; (50 Hz), sine T_VJ = 45C	kAs		1.06
I²t	value for fusing	t = 8,3 ms; (60 Hz), sine T_VJ = 45C	kAs		1.11
V_T	forward voltage drop	I_T = 50 A; T_VJ = 25C	V		1.31
V_T0	threshold voltage	T_VJ = 25C	V		0.83
r_T	slope resistance for power loss calculation only	T_VJ = 25C	m		9.6
P_tot	total power dissipation	T_C = 25C	W			310
P_GM	max. gate power dissipation	t_p = 30 s	W		10
P_GAV	average gate power dissipation		W		0.5
C_J	junction capacitance	V_R = 0 V; f = 1 MHz	pF		26
I_TSM	max. forward surge current	t = 10 ms; (50 Hz), sine T_VJ = 45C	kA		1.52
I_TSM	max. forward surge current	t = 8,3 ms; (60 Hz), sine T_VJ = 45C	kA		1.48
t_gd	gate controlled delay time	I_T = 50 A; G = 0.3	s		2
t_q	turn-off time	I_T = 50 A; V_D = V_DRM; di/dt = 10 A/s; dv/dt = 20 V/s	s		200
R_thJC	thermal resistance junction to case		K/W		1.11
V_GT	gate trigger voltage	I_T = 5 A; V_D = 6 V; T_VJ = 25C	V		0.8	1.5
I_GT	gate trigger current	I_T = 5 A; V_D = 6 V; T_VJ = 25C	mA		10	25
V_GD	gate non-trigger voltage	V_D = V_DRM; T_VJ = 150C	V		0.2
I_GD	gate non-trigger current	V_D = V_DRM; T_VJ = 150C	A		5
I_L	latching current	I_T = 50 A; G = 0.3	mA		25
I_H	holding current	V_D = 6 V; R_GK = ; T_VJ = 100C	mA		25
T_VJ	virtual junction temperature		C	-40		150
T_stg	storage temperature		C	-40		150

2410311221_Littelfuse-IXYS-CMA50E1600HB_C3614136.pdf

Quality Littelfuse IXYS CMA50E1600HB Thyristor with 1600 Volt Max Blocking Voltage and 1.11 kAs Fusing Value for sale

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